The new gate drivers target the popular new dual, 100 mm x 140 mm style of IGBT modules, such as the Mitsubishi LV100 and the Infineon XHP 2, as well as silicon carbide (SiC) variants thereof up ...

Power Integrations Launches SCALE EV: Automotive-Qualified IGBT/SiC Module Driver Family; Targets Bus, Truck and Con-Ag EVs Compact driver board features reinforced isolation, ASIL B/C certification ...

Wolfspeed’s half-bridge 1200-V power module, the CAS325M12HM2 achieves high efficiency and power density for high-current power electronics, such as converters, inverters, motor drives, and electric ...

Cree’s SiC (silicon carbide) 1.7-kV half-bridge module—with integrated C2M MOSFET and Z-Rec diode—exhibits an on-resistance of 8 m? and 10 times higher switching efficiency than existing Si (silicon) ...

Development of the SiC power module was funded by AFRL. It features Cree high-current SiC MOSFETs and SiC Schottky diodes, which were developed under contracts from Army Research Laboratory (ARL).

The 1.2kV, 50A six-pack module is available in an industry standard 45mm package. Cree says it delivers performance equivalent to silicon modules rated at 150A, enabling designers to create higher ...

Family pricing on Microchip’s ASDAK-MSCSM70AM025CT6LIAG-01 AgileSwitch digital programmable gate driver and 1200V, 495A, Single Phase Leg SP6LI SiC power module kits starts at $999.95.

Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. It is powered by Cree’s C2M large area SiC chip technology and ...

Cree's SiC power module family can also provide significant benefits to applications such as solar inverters, uninterruptible power supplies (UPS) and industrial power supplies.

Kyoto and Santa Clara, Calif.,, May 16, 2017 (GLOBE NEWSWIRE) -- ROHM has recently announced the development of 1200V 400A/600A rated full SiC power modules [BSM400D12P3G002/ BSM600D12P3G001 ...