“This paper is pretty unique,” said Zhongrui Wang, a longtime RRAM researcher at the University of Hong Kong. “It makes contributions at different levels — at the device level, at the circuit ...

N aveen Verma‘s lab at Princeton University is like a museum of all the ways engineers have tried to make AI ultra-efficient ...

In flash memory, it’s stored as electric charge in transistors, while the emerging resistive RAM (RRAM) devices store and read data as changes in electrical conductivity. But they have their own ...

"We need much more precise information about the fundamental behavior of RRAM before we can hope to produce reliable devices," says Philip Wong, the Stanford electrical engineer who led the study.

Thus, RRAM is robust and efficient for both code storage and data logging in the same memory device. Through optimizations such as byte re-writability and eliminating erase operations during data ...

These 3D devices differ from traditional 2D RRAM devices by stacking layers of memory storage cells vertically instead of a traditional flat arrangement, allowing for a smaller footprint and more ...

Silicon Valley start-up Crossbar expects some of its 3D Restive RAM (3D RRAM) products to be out in 2016 as memory in wearable devices, with high-density storage devices like solid-state drives ...

On top of higher-capacity mobile devices, we could see much higher-capacity solid-state drives come to fruition with RRAM. Solid-state drives currently use NAND flash memory, and they’re able to ...

In addition, RRAM reportedly uses 20 times less power—enabling mobile devices to last weeks or months on a charge—and Crossbar says it has 10 times the endurance of NAND flash technology.

including type of high performing RRAM called a-Si RRAM. A typical device consists of two metallic electrodes that sandwich a thin dielectric layer serving as the ion transport and storage medium ...