IBM, GlobalFoundries, and Samsung along, with STMicroelectronics and UMC, will describe a 10 nm logic process with the tightest contacted poly pitch (64 nm) and metallization pitch (48 nm) ever ...

In finFETs, the control of the current is accomplished by implementing a gate on each of the three sides of a fin. Don’t expect any big changes in the material sets at 7nm, though. Chipmakers will ...

In finFETs, the control of the current is accomplished by implementing a gate on each of the three sides of a fin. A key spec is the gate-pitch. The gate-pitch for Intel’s 10nm finFET technology is ...

The metal layers at the bottom of the stack, closest to the devices, must be on-pitch or very close to both the fin and poly pitch. This means the metal pitches for these layers should be among the ...

Kwara State Polytechnic (KWARA POLY), Ilorin, has won the University of Ilorin Mass Communication Department’s Pitch-A-Ton competition. At the contest, which took place at the University of ...

"Intel 3" is the name of Intel's latest chip production process with FinFET transistors. ... (50 nanometer Contacted Poly Pitch/CPP) and between transistor "fins" (30 nanometer Fin Pitch).

No matter whom you talk to from the Poly Prep baseball team, his assessment is the same: this is a club based on pitching — deep, talented pitching. ... Pitch-rich Poly eyes third-straight state title ...

The same was said about 40nm since 28nm HKMG was more expensive, which is one of the reasons why 28nm poly/SiON was introduced first. Let’s face it, the mobile SoC business drives the leading edge ...

As a result of Intel’s aggressive pitch scaling along with Hyper Scaling made possible by their advanced Self-Aligned Quad Patterning techniques, up to 100.8 million 10nm FinFET transistors can ...

Poly baseball coach Charles Sullivan will be the first to admit his sixth-ranked Engineers have a deficiency in one of the game’s most critical areas — pitching.Yet his starting hurlers ...