The use of finFETs and multi-patterning has a huge impact on the entire physical implementation flow. This paper outlines the new challenges in placement, routing, optimization, and physical ...

And because FinFETs are being implemented at 16/14 nm, multi-patterning automatically becomes a part of any design using FinFETs, which adds yet another layer of complexity. Design automation ...

“This strategic collaboration extends the value proposition of a single GDSII multi-sourcing to the FinFET nodes. With this true multi-source platform, Samsung and GLOBALFOUNDRIES have made it ...

So, this brings us back to Subramani “Subi” Kengeri’s claim that GlobalFoundries has a better FinFET process for mobile SoCs. As was mentioned last summer at the SEMICON West conference panel, mobile ...

How does a nanosheet transistor compare with a FinFET? Issues involved in developing ... Samsung rolled out a variation of the nanosheet—called the Multi-Bridge-Channel FET (MBCFET)—before ...

NXP S32R47 high performing imaging radar processors in 16nm FinFET technology address demanding autonomous driving ...

Altera and Intel are working together on the development of multi-die devices which integrate 14nm Stratix 10 FPGAs with memory, processors and analogue components in a single package. The ...

But increasingly, sudden transitions are becoming the norm—consider the introduction of multi-patterning and finFET transistors in recent generations of nanometer processes. New extraction ...

bringing the IC design learning experience to the advanced FinFET level. The program will also provide access for leading IC researchers in universities to both 16nm (N16) and 7nm (N7) silicon through ...

Due to increased smartphone penetration and developing technologies such as artificial intelligence, IoT, and machine learning, which are boosting demand for FinFET Technology. The increasing ...