Figure 10. Multi-Fin FinFET Structure In conventional MOS, a doping is inserted into the channel, reducing the various SCEs and ensuring high V th. While in FinFET, the gate structure is wrapped ...

Altera and Intel are working together on the development of multi-die devices which integrate 14nm Stratix 10 FPGAs with memory, processors and analogue components in a single package. The ...

In our last post, we looked at the basics of finFET technology and how its increased complexity ... Modern technologies achieve this with a multi-patterning technique known as self-aligned double ...