Japanese scientists have developed a spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) device with the ...

Researchers at the Center for Innovative Integrated Electronic Systems (CIES), Tohoku University, have achieved the world's ...

Source: Objective Analysis/Coughlin Associates, 2023 Today there are two major types of MRAM, standalone and embedded, and three primary application areas: Non-volatile RAM (NVRAM), which is where ...

That’s why SOT-MRAM is seen as a promising candidate for replacing SRAM as a last-level cache (LLC) memory in high-performance computing (HPC) applications. Like SRAMs, SOT-MRAM offers a high ...

Researchers at the Center for Innovative Integrated Electronic Systems (CIES), Tohoku University, have achieved the world's ...

Magneto-resistive random-access memory (MRAM) offers the potential to provide gigabytes (GBs) of fast, non-volatile storage without the above limits to enable the next generation of satellite ...

This is a newer form of MRAM, available in 256MB-1GB densities it is mostly indicated for replacing battery-backed DRAM in data centers and SRAM where more robust data retention is required.

New Delhi: UK-based SRAM & MRAM Group is in advanced stage of discussion with semiconductor makers SK Hynix and GlobalFoundries to collaborate for its proposed Rs 30,000 crore chip manufacturing ...

New Delhi: UK-based conglomerate SRAM & MRAM Group has appointed Nitin Gupta as Technical Director for its Odisha semiconductor project, according to a statement. The group, a UK-based investment ...

UK-based SRAM & MRAM Group is in an advanced stage of discussion with semiconductor makers SK Hynix and GlobalFoundries to collaborate for its proposed Rs 30,000 crore chip manufacturing plant and a ...