Magnetoresistive random-access memory, or MRAM, promises to make computers more efficient and powerful, but a few hurdles still need to be cleared.

“MRAM device physics allows application-specific tuning by trading off retention for endurance and speed,” said Cyrille Dray, senior principal engineer at Arm. “This leads to flash-like and SRAM-like ...

Beyond the density improvements for DRAM and all emerging memories, Spin Memory’s new Universal Selector will bring MRAM to a new level of SRAM-like performance. Combined with the company’s other MRAM ...

In the near future, STT-MRAM will be used to replace SRAM in end applications such as hyperscale computing, in-memory computing, artificial intelligence and machine learning. Maximizing Manufacturing ...

CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory ...