Buffalo Memory’s innovative SATA III SSD is first to implement Spin Torque MRAM as cache memory Embedded Technology 2013 November 18, 2013 08:03 AM Eastern Standard Time ...

A research team has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications ...

With STT-MRAM, we are finally looking at an entirely new implementation of a one and a zero. Faster, cheaper, denser, and durable non-volatility combined in a single memory design.

Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent ...

MRAM — which is a non-volatile memory technology — is considered a promising long-term candidate to replace memory chip stalwarts DRAM and NAND flash, which face major scaling challenges as the ...

CHANDLER, Ariz., August 20, 2024--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory ...

Fabricated using a 22-nm process, the MCU test chip includes a 10.8-megabit (Mbit) embedded MRAM memory cell array and can achieve a random read access frequency of over 200 MHz and a write throughput ...

In the changed post COVID-19 business landscape, the global market for Magneto Resistive RAM (MRAM) estimated at US$1.5 Billion in the year 2022, is projected to reach a revised size of US$17.5 ...

The 2022 IEDM featured dense low power embedded MRAM from Samsung, high endurance ferroelectric capacitor for FeRAM from imec and object localization using neuromorphic computing with RRAM. We ...