For now, that future is still a ways off. Today, MRAM is only beginning its ascendency in the computing world, but this new discovery gives it a big boost as the memory chip of the future.

Magnetoresistive random-access memory, or MRAM, promises to make computers more efficient and powerful, but a few hurdles still need to be cleared.

STT claims this new approach will increase spin-torque efficiency of an MRAM device by 40-70 percent, allowing for retention times that are as much as 10,000x higher than before.

Total MRAM manufacturing equipment revenue will grow to over forty-nine times its 2021 total to reach about $1.5 billion in 2032 as shown in the figure below.

Memory technology has evolved quickly in recent years, driven by the need to improve on traditional systems. One promising candidate, Magnetoresistive Random Access Memory (MRAM), is gaining ...

Traditional MRAM works through magnetization switching using spin-transfer torque (STT) or spin-orbit torque (SOT). These methods pass electric currents through dense metals like platinum or tungsten.

MRAM researcher Everspin has signed a new agreement to build 40nm MRAM with GlobalFoundries, but will the chips ever hit densities that compete with NAND flash?

Current MRAM technology faces its own challenges, particularly in how data is written to the memory. Traditional MRAM devices rely on electric currents to write data, but this approach becomes ...

With STT-MRAM, we are finally looking at an entirely new implementation of a one and a zero. Faster, cheaper, denser, and durable non-volatility combined in a single memory design.

Everspin’s STT-MRAM and Toggle MRAM devices allow enterprise infrastructure, data center, industrial, IoT and a host of other application providers to increase the reliability and performance of ...

Everspin’s new 32Mb Toggle MRAM (MR5A16A) provides twice the capacity of its current 16Mb solution and enables critical applications, such as storing configurations and setup and data logging in ...