By increasing the performance of amplifier ICs using InP HBT technology and advancing package mounting technology, NTT succeeded in realizing the world's first ultra-compact amplifier IC module ...

“InP extends our semiconductor process technology arsenal, which already includes InGaP HBT, GaAs MESFET, GaAs PHEMT, silicon and ceramics,” said Ding Day, Alpha’s vice president of process ...

Vitesse Semiconductor Corp. is to work with partners BAe Systems and the University of Illinois (UIUC) to fulfill a $6 million contract from the Defense Advanced Research Projects Agency (DARPA). The ...

Live demonstrations of the 200G/lane InP PIC powering a 1.6Tbps optical module with superior eye quality, together with 1.6T, 800G, LPO/LRO and 25/50G PON high-performance optical transceiver ...

Alpha unveils InP HBT processNews from E-InSiteAlpha Industries yesterday introduced its advanced indium phosphide- (InP) based heterojunction bipolar transistor (HBT) process targeted at ...