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When it comes to currently used infrared photodiode sensors, they are typically made of indium gallium arsenide (InGaAs).
The solar cell design features indium gallium phosphide (InGaP), indium gallium arsenide (InGaAs), and germanium (Ge). The cell, developed by a team from Université de Sherbrooke, highlights a ...
GPD Optoelectronics Corp., is a global supplier of Ge & InGaAs photodetectors operating in the 0.8 to 2.6 micron short wave infrared (SWIR) spectrum. The Ge photodiodes, InGaAs photodiodes and InGaAs ...
Manufacturer of standard and custom silicon, SiC, LAAPD, InGaAs and extended InGaAs photodiodes and detectors and CdS ambient light photocells for industrial, medical, homeland security and military ...
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