The data center stands out as a crucial growth driver for Micron, with estimated DRAM demand for data centers set to grow by 28% and NAND by 33%. Several factors contribute to this growth expansion.

With a 50% increase over the HBM3 Gen1 data rate of 6.4 Gbps, the Rambus HBM3 Memory Controller can enable a total memory throughput of over 1.2 Terabytes per second (TB/s) for training of ...

At this data rate, an accelerator with 8 attached HBM3 memory devices could achieve 8.6 TB/s of memory bandwidth. The Rambus HBM3 Memory Subsystem, comprised of integrated PHY and Memory Controller, ...

In numbers, an HBM3 stack can reach 819 GB/s of bandwidth and have 64 GB of capacity. In comparison, the HBM2e stacks used by the AMD MI250 have half the bandwidth, 410 GB/s, and a quarter of the ...

It allows cloud service providers to leverage Alphawave Semi’s HBM3 IP subsystems and custom silicon capabilities to accelerate AI workloads in next-generation data center infrastructure.” ...