1 shows a white-light LED in action). It is possible to generate light in semiconductor materials (such as GaN or AlInGaP) by injecting electrons into the conduction band of the material and ...
While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption in further industries, substantially driving the market for GaN-based ...
Focused on GaN related materials and devices, particularly optoelectronics. Hybrid organic/inorganic optoelectronics Non-radiative energy transfer processes in hybrid GaN/organic interfaces High ...
One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...
“IQE offers a broad range of compound semiconductor materials in single crystal substrate, ingot and polycrystalline forms and has contributed to the development of silicon, silicon carbide, sapphire ...
Wolfspeed, Inc. is an innovator of wide bandgap semiconductors, focused on silicon carbide and gallium nitride (GaN) materials and devices for power and radio-frequency (RF) applications.
Navitas’ GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy ...
Navitas Semiconductor, a developer of next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power ...
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