Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...

Combo ICeGaN further extends the benefits of CGD’s GaN technology into the rich 100kW+ traction inverter market. ICeGaN ICs have been proven to be very robust and IGBTs have a long and proven ...

Sensing and protection functions are intelligently managed to optimally drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of both ICeGaN and IGBT devices. ICeGaN technology allows EV ...

Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...

The market for EV power modules is expected to grow to USD 3 billion by 2025. Demand is likely to grow to USD 25.8 billion in revenue by 2035, representing a 23.2% CAGR during the forecast period. The ...

GaN power transistors (labelled “GaN” in figure) are the latest and fastest power devices to emerge on the market. GaN devices won the Google Littlebox Challenge, because their sub-10ns switching ...

It is “a design that can be used to compare the real-life performance of various high power IGBT, 1st and 2nd generation SiC, GaN, mosfet and cascode switching technologies”, said the firm. “As the ...

Sensing and protection functions are intelligently managed to optimally drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of both ICeGaN and IGBT devices. ICeGaN technology allows EV ...