Gallium Nitride (GaN) power devices are becoming increasingly important in the field of power electronics due to their ability to operate at high voltages and efficiencies. Recent research has ...

Designed by ESA’s Radio Frequency Equipment and Technology Section, the amplifier was built in gallium nitride on silicon, rendering it much more robust against high input power signals than ...

A groundbreaking tiny chip, smaller than a strawberry seed, may soon revolutionize space communications. Developed by the ...

GREENSBORO, N.C.--(BUSINESS WIRE)--Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being ...

In the realm of solid-state power amplifiers (SSPAs), a recent study reported the realization of a two-stage 16-way SSPA in the Ka-band, utilizing gallium nitride (GaN) technology. This system ...

"Our FOX-P platform allows customers using the FOX-NP for device qualification and reliability testing of power semiconductors like GaN and silicon carbide (SiC) to transition seamlessly to the ...

BluGlass (ASX:BLG), a developer of advanced gallium nitride (GaN) laser technology, has unveiled new capabilities targeting ...

"The amplifier was designed by ESA's Radio Frequency Equipment and Technology Section, and built in gallium nitride on silicon, rendering it much more robust against high input power signals than ...

are capable of functional test and burn-in/cycling of devices such as silicon carbide and gallium nitride power semiconductors, artificial intelligence processors, silicon photonics as well as ...