Compound Semiconductor7d
Rohm launches 650V GaN HEMT in TOLL package
Rohm has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package - a packaging technology increasingly being adopted in ...
Electronic Design1d
Turning on the Lights: GaN Power FETs for LiDAR Sensors
Gallium-nitride (GaN) power devices are becoming one of the core building blocks in LiDAR sensors thanks to their ultra-fast ...
ROHM Launches 650V GaN HEMT in a Compact, High-heat Dissipation TO-Leadless Package
In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, ROHM plans to ensure the rapid introduction of automotive-grade GaN devices by ...