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Chinese scientists claim carbon nanotube transistor breakthrough — AI performance boosts from Gate All Around designCarbon nanotube (CNT) transistors are essentially gate-all-around (GAA) field-effect transistors (GAA FETs) that can be ...
In a newly published paper, the team presents a 2D gate-all-around (GAA) transistor that they claim beats the latest silicon-based designs from Intel and TSMC in both speed and energy efficiency.
“In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET are reviewed. These innovations span enablement of multiple threshold voltages and bottom dielectric ...
NVIDIA's Jensen Huang said during a Q&A session at GTC 2025 that he expects GAA to be 20% better than the current FinFET technology.
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