In finFETs, the control of the current is accomplished by implementing a gate on each of the three sides of a fin. Don’t expect any big changes in the material sets at 7nm, though. Chipmakers will ...

IBM, GlobalFoundries, and Samsung along, with STMicroelectronics and UMC, will describe a 10 nm logic process with the tightest contacted poly pitch (64 nm) and metallization pitch (48 nm) ever ...

At this week’s IEEE IEDM 2018 conference, imec, the Leuven-based research and innovation hub has presented a first demonstration of 3D stacked FinFETs on 300mm wafers using a sequential integration ...

FinFET Impacts For Reducing Physical IP Power Consumption Things to watch out for and other considerations when ... better matching behavior; and the metal gates eliminate poly depletion effects. For ...

The metal layers at the bottom of the stack, closest to the devices, must be on-pitch or very close to both the fin and poly pitch. This means the metal pitches for these layers should be among the ...

At the December 2021 IEDM conference (a conference for people who design advanced semiconductors), IBM announced it was turning transistors on their heads to keep Moore’s Law scaling alive.

Imec has demo-ed 3D stacked FinFETs on 300mm wafers using a sequential integration approach with a 45nm fin pitch and 110nm poly pitch technology. The top layer consists of junction-less devices ...

"Intel 3" is the name of Intel's latest chip production process with FinFET transistors. ... (50 nanometer Contacted Poly Pitch/CPP) and between transistor "fins" (30 nanometer Fin Pitch).

The Emergence of FinFET Technology With each generation of integrated circuit technology, custom physical layout becomes more and more challenging. From the days of manually cutting shapes into ...

Gate pitch has been measured at ~70nm, fin pitch at ~42nm, and a more complex 13-layer metal design. ... The FinFET transistors of a 14nm Broadwell chip, as seen from above in plan view.