These protrusions can be found at many different finFET nodes, and poly corner residue is commonly formed during the poly etch process [4-7]. Fig. 1: Fabricated 3D corner residue and its profile at ...

In this paper, we study the effect of poly corner residue during a 5nm FinFET poly etch process using virtual fabrication. A systemic investigation was performed to understand the impact of poly ...

FinFET Transistor Basics. ... They can also be on top of an insulating layer as in silicon-on-insulator (SOI) CMOS. The gate poly is deposited such that it runs up one side of the fin, over the top, ...

At this week’s IEEE IEDM 2018 conference, imec, the Leuven-based research and innovation hub has presented a first demonstration of 3D stacked FinFETs on 300mm wafers using a sequential integration ...

In response, imec developed a thermally stable FinFET-based peripheral technology platform with integrated modules optimized for DRAM. Multiple flavors with different performance-cost trade-offs have ...

Researchers are making progress in developing new types of transistors, called finFETs, which use a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

TSMC has made a series of aggressive announcements around its next-generation technology -- not only has it produced a Cortex-A57 CPU on 16nm FinFET, it's beginning its earliest work on 10nm.

FinFET Technology Market, By Product (CPU, MCU, GPU, FPGA, SoC, Network Processor), By Technology (20nm, 22nm, 7nm, 10nm, 14nm, 16nm), By End-Users (Computers & Tablets, Smartphones, Automotive ...

FinFET technology is seen as the answer to fabrication processes below 20 nm. However, FinFET also presents a lot of uncertainty and concern related to defect manifestation, necessary test methods, ...