A team of researchers from Peking University claims to have developed a non-silicon transistor that is faster and more ...

In one example, GlobalFoundries recently presented a paper on an experimental 14nm finFET, which incorporates doped hafnia ferroelectric layers in the gate stack. GlobalFoundries called it a 14nm ...

D transistor offering 40% faster speeds and lower energy use may soon disrupt the global chip market - if China can successfully scale production.

(The paper was co-authored by Benjamin Bunday, A. F. Bello and Eric Solecky.) For finFETs, chipmakers use CD-SEMs, in addition to other tools. But those other metrology tool types also have some ...

That would set Intel’s product and process technology plans back by a year or more. In a paper on the GSS website, Asenov points out that, while Intel bulk FinFETs have 12%-15% less performance than ...

a new SRAM cell using fin-shaped FETs (FinFETs) is the smallest such cell ever developed, according to Toshiba Corp, IBM, and AMD. The companies reported their achievement in a technical paper ...

Image by EETimes At the International Solid State Circuits Conference (ISSCC) this week, Intel presented a paper on its own spin ... STT-MRAM arrays on its 22FL FinFET process.

Due to increased smartphone penetration and developing technologies such as artificial intelligence, IoT, and machine learning, which are boosting demand for FinFET Technology. The increasing ...

HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...