Such transistors are referred to as gate-all-around, or GAA, transistors, and different variants have been proposed. Early GAA devices will use vertically-stacked nanosheets. They are constructed of ...

A delay of 19ps was achieved with a 2.2nm oxide and 140 nm gate-length FinFET, operating at 1.5V. Physical design conversion of planar CMOS circuits to FinFET has also been demonstrated. In the figure ...

The first well-behaved inversion-mode InGaAs FinFET with gate length down to 100 nm with ALD Al2O3 as gate dielectric has been demonstrated. Using a damage-free sidewall etching method, FinFETs with ...

The FinFET includes a spacer at the top of the fin and is considered a dual-gated device with a gate on two sides of the channel. The Tri-Gate FET, on the other hand, is gated on three sides of the ...

At this week’s VLSI 2015 Symposium in Kyoto (Japan), imec reported new results on nanowire FETs and quantum-well FinFETs towards post-FinFET multi-gate device solutions. As the major portion of the ...

Researchers are making progress in developing new types of transistors, called finFETs, which use a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

GAAFETs are the next evolution of tri-gate finFETs: finFETs, which are currently used for most 22nm-and-below chip designs, will probably run out of steam at around 7nm; GAAFETs may go all the way ...

The world is heading into the age of gate-all-around (GAA) or nanosheet transistors. While it was never going to save Moore’s Law by itself, the new device is opening the door to continuous ...

LONDON — Researchers at Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC), the world's largest foundry supplier of chips, have prepared n-type and p-type FinFETs with gate lengths of 10-nanometers ...

New 'finFET' promising for smaller transistors, more powerful chips WEST LAFAYETTE, Ind. - finFET ... As gate lengths are made smaller than 22 nanometers, the silicon dioxide insulator used in ...