A type of 3D FinFET transistor from Intel introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain ...

During a Q&A session at the GPU Technology Conference, Huang estimated a roughly 20% performance uplift from transitioning to ...

FinFET Transistor Basics A finFET — a type of field-effect transistor (FET) — can be envisioned as a traditional planar CMOS transistor turned on its side so that the gate polysilicon can interface ...

So far, it appears that finFETs developed at 16/14nm will scale to 7nm, although there still could be changes as test chips begin rolling out of foundries. It is assumed that gate-all-around FETs will ...

In this section, we will discuss two new MOS structures, SOI and FinFET. The main objective of both the structures is to maximize gate-to-channel capacitance and minimize drain-to-channel capacitance.

The 16nm FinFET node has introduced several new challenges in the IC design community. In addition to the complexity of power-noise and electromigration (EM) verification, thermal reliability has ...

Gates-all-around nanosheets mark the death of FINFET  TSMC just christened its under-construction Fab 22 in Kaohsiung which will be the centrepiece of a colossal $45 billion Taiwan spend-up aimed at ...

NVIDIA's Jensen Huang said during a Q&A session at GTC 2025 that he expects GAA to be 20% better than the current FinFET technology.